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Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors

Hinojosa, M. / Bayne, S. / Veliadis, V. / Urciuoli, D.

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Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors

Hinojosa, M. / Bayne, S. / Veliadis, V. / Urciuoli, D.

Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors

Hinojosa, M. / Bayne, S. / Veliadis, V. / Urciuoli, D.

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Check availability in my library

Order at Subito €

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Document information

Title:

Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors

Contributors:

Hinojosa, M. (author) / Bayne, S. (author) / Veliadis, V. (author) / Urciuoli, D. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 1025-1028

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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