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High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces
High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces
High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces
Noborio, M. (author) / Suda, J. (author) / Kimoto, T. (author)
MATERIALS SCIENCE FORUM ; 615/617 ; 789-792
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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