Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs: Fid-Bau Portal

Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs

Strenger, C. / Uhnevionak, V. / Mortet, V. / Ortiz, G. / Erlbacher, T. / Burenkov, A. / Bauer, A.J. / Cristiano, F. / Bedel-Pereira, E. / Pichler, P.

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Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs

Strenger, C. / Uhnevionak, V. / Mortet, V. / Ortiz, G. / Erlbacher, T. / Burenkov, A. / Bauer, A.J. / Cristiano, F. / Bedel-Pereira, E. / Pichler, P.

Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs

Strenger, C. / Uhnevionak, V. / Mortet, V. / Ortiz, G. / Erlbacher, T. / Burenkov, A. / Bauer, A.J. / Cristiano, F. / Bedel-Pereira, E. / Pichler, P.

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Title:

Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs

Contributors:

Strenger, C. (author) / Uhnevionak, V. (author) / Mortet, V. (author) / Ortiz, G. (author) / Erlbacher, T. (author) / Burenkov, A. (author) / Bauer, A.J. (author) / Cristiano, F. (author) / Bedel-Pereira, E. (author) / Pichler, P. (author)

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 583-586

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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