Almost Ideal Thermionic-Emission Properties of Ti-Based 4H-SiC Schottky Barrier Diodes: Fid-Bau Portal

Almost Ideal Thermionic-Emission Properties of Ti-Based 4H-SiC Schottky Barrier Diodes

Stephani, D. / Schoerner, R. / Peters, D. / Friedrichs, P.

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Almost Ideal Thermionic-Emission Properties of Ti-Based 4H-SiC Schottky Barrier Diodes

Stephani, D. / Schoerner, R. / Peters, D. / Friedrichs, P.

Almost Ideal Thermionic-Emission Properties of Ti-Based 4H-SiC Schottky Barrier Diodes

Stephani, D. / Schoerner, R. / Peters, D. / Friedrichs, P.

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Check availability in my library

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Document information

Title:

Almost Ideal Thermionic-Emission Properties of Ti-Based 4H-SiC Schottky Barrier Diodes

Contributors:

Stephani, D. (author) / Schoerner, R. (author) / Peters, D. (author) / Friedrichs, P. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

Published in:

Silicon Carbide and Related Materials - 2005 ; 1147-1150

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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