Low On-Resistance in 4H-SiC RESURF JFETs Fabricated with Dry Process for Implantation Metal Mask: Fid-Bau Portal

Low On-Resistance in 4H-SiC RESURF JFETs Fabricated with Dry Process for Implantation Metal Mask

Masuda, T. / Fujikawa, K. / Shibata, K. / Tamaso, H. / Hatsukawa, S. / Tokuda, H. / Saegusa, A. / Namikawa, Y. / Hayashi, H.

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Low On-Resistance in 4H-SiC RESURF JFETs Fabricated with Dry Process for Implantation Metal Mask

Masuda, T. / Fujikawa, K. / Shibata, K. / Tamaso, H. / Hatsukawa, S. / Tokuda, H. / Saegusa, A. / Namikawa, Y. / Hayashi, H.

Low On-Resistance in 4H-SiC RESURF JFETs Fabricated with Dry Process for Implantation Metal Mask

Masuda, T. / Fujikawa, K. / Shibata, K. / Tamaso, H. / Hatsukawa, S. / Tokuda, H. / Saegusa, A. / Namikawa, Y. / Hayashi, H.

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Title:

Low On-Resistance in 4H-SiC RESURF JFETs Fabricated with Dry Process for Implantation Metal Mask

Contributors:

Masuda, T. (author) / Fujikawa, K. (author) / Shibata, K. (author) / Tamaso, H. (author) / Hatsukawa, S. (author) / Tokuda, H. (author) / Saegusa, A. (author) / Namikawa, Y. (author) / Hayashi, H. (author) / Devaty, R. P.

Published in:

Silicon Carbide and Related Materials - 2005 ; 1203-1206

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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