High Power-Density 4H-SiC RF MOSFETs: Fid-Bau Portal

High Power-Density 4H-SiC RF MOSFETs

Gudjonsson, G. / Allerstam, F. / Olafsson, H. O. / Nilsson, P. A. / Hjelmgren, H. / Andersson, K. / Sveinbjornsson, E. O. / Zirath, H. / Rodle, T. / Jos, R.

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High Power-Density 4H-SiC RF MOSFETs

Gudjonsson, G. / Allerstam, F. / Olafsson, H. O. / Nilsson, P. A. / Hjelmgren, H. / Andersson, K. / Sveinbjornsson, E. O. / Zirath, H. / Rodle, T. / Jos, R.

High Power-Density 4H-SiC RF MOSFETs

Gudjonsson, G. / Allerstam, F. / Olafsson, H. O. / Nilsson, P. A. / Hjelmgren, H. / Andersson, K. / Sveinbjornsson, E. O. / Zirath, H. / Rodle, T. / Jos, R.

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Document information

Title:

High Power-Density 4H-SiC RF MOSFETs

Contributors:

Gudjonsson, G. (author) / Allerstam, F. (author) / Olafsson, H. O. (author) / Nilsson, P. A. (author) / Hjelmgren, H. (author) / Andersson, K. (author) / Sveinbjornsson, E. O. (author) / Zirath, H. (author) / Rodle, T. (author) / Jos, R. (author)

Published in:

Silicon Carbide and Related Materials - 2005 ; 1277-1280

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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