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Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400^oC) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace
Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400^oC) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace
Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400^oC) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace
Kosugi, R. (author) / Suzuki, K. (author) / Takao, K. (author) / Hayashi, Y. (author) / Yatsuo, T. (author) / Fukuda, K. (author) / Ohashi, H. (author) / Arai, K. (author) / Devaty, R. P. / Larkin, D. J.
Silicon Carbide and Related Materials - 2005 ; 1309-1312
MATERIALS SCIENCE FORUM ; 527/529
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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