Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400^oC

    New search for: Naik, H.
    New search for: Chow, T.P.
    New search for: Okumura, H.
    New search for: Harima, H.
    New search for: Kimoto, T.
    New search for: Yoshimoto, M.
    New search for: Watanabe, H.
    New search for: Hatayama, T.
    New search for: Matsuura, H.
    New search for: Funaki, T.
    New search for: Sano, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400^oC

    New search for: Naik, H.
    New search for: Chow, T.P.
    New search for: Okumura, H.
    New search for: Harima, H.
    New search for: Kimoto, T.
    New search for: Yoshimoto, M.
    New search for: Watanabe, H.
    New search for: Hatayama, T.
    New search for: Matsuura, H.
    New search for: Funaki, T.
    New search for: Sano, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400^oC

    New search for: Naik, H.
    New search for: Chow, T.P.
    New search for: Okumura, H.
    New search for: Harima, H.
    New search for: Kimoto, T.
    New search for: Yoshimoto, M.
    New search for: Watanabe, H.
    New search for: Hatayama, T.
    New search for: Matsuura, H.
    New search for: Funaki, T.
    New search for: Sano, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400^oC

    Contributors:

    Naik, H. (author) / Chow, T.P. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H. / Hatayama, T. / Matsuura, H. / Funaki, T.

    Published in:

    Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 607-610

    MATERIALS SCIENCE FORUM ; 778/780

    Publication date:

    2014-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication

    Constant, A. / Camara, N. / Montserrat, J. et al. | British Library Online Contents | 2011

    Fabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al~2O~3 Gate Insulator

    Hino, S. / Hatayama, T. / Miura, N. et al. | British Library Online Contents | 2007

    Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process

    Tanimoto, S. / Kiritani, N. / Hoshi, M. et al. | British Library Online Contents | 2003

    First AlGaN/GaN MOSFET with photoanodic gate dielectric

    Mistele, D. / Rotter, T. / Rover, K. S. et al. | British Library Online Contents | 2002

    Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400^oC) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace

    Kosugi, R. / Suzuki, K. / Takao, K. et al. | British Library Online Contents | 2006

    Back to top