A platform for research: civil engineering, architecture and urbanism
1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance
1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance
1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance
Lee, H.S. (author) / Domeij, M. (author) / Zetterling, C.M. (author) / Ghandi, R. (author) / Ostling, M. (author) / Allerstam, F. (author) / Sveinbjornsson, E.O. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 1151-1154
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Current Gain Dependence on Emitter Width in 4H-SiC BJTs
British Library Online Contents | 2006
|British Library Online Contents | 2009
|Stability of Current Gain in SiC BJTs
British Library Online Contents | 2014
|4H-SiC Power BJTs with High Current Gain and Low On-Resistance
British Library Online Contents | 2007
|Current Gain Degradation in 4H-SiC Power BJTs
British Library Online Contents | 2011
|