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High Temperature Characterization of 4H-SiC Bipolar Junction Transistors
High Temperature Characterization of 4H-SiC Bipolar Junction Transistors
High Temperature Characterization of 4H-SiC Bipolar Junction Transistors
Krishnaswami, S. (author) / Agarwal, A. K. (author) / Richmond, J. (author) / Capell, C. (author) / Ryu, S. H. (author) / Palmour, J. W. (author) / Geil, B. R. (author) / Katsis, D. (author) / Scozzie, C. J. (author) / Devaty, R. P.
Silicon Carbide and Related Materials - 2005 ; 1437-1440
MATERIALS SCIENCE FORUM ; 527/529
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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