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Surface Passivation of 4H-SiC for High Current Gain Bipolar Junction Transistors
Surface Passivation of 4H-SiC for High Current Gain Bipolar Junction Transistors
Surface Passivation of 4H-SiC for High Current Gain Bipolar Junction Transistors
Negoro, Y. (author) / Horiuchi, A. (author) / Iwanaga, K. (author) / Yokoyama, S. (author) / Hashimoto, H. (author) / Nonaka, K. (author) / Maeyama, Y. (author) / Sato, M. (author) / Shimizu, M. (author) / Iwakuro, H. (author)
MATERIALS SCIENCE FORUM ; 615/617 ; 837-840
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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