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4H-SiC Bipolar Junction Transistors with Graded Based Doping Profile
4H-SiC Bipolar Junction Transistors with Graded Based Doping Profile
4H-SiC Bipolar Junction Transistors with Graded Based Doping Profile
Zhang, J.H. (author) / Fursin, L. (author) / Li, X.Q. (author) / Wang, X.H. (author) / Zhao, J.H. (author) / VanMil, B.L. (author) / Myers-Ward, R.L. (author) / Eddy, C.R. (author) / Gaskill, D.K. (author)
MATERIALS SCIENCE FORUM ; 615/617 ; 829-832
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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