A Study of Nitrogen Incorporation in PVT Growth of n^+ 4H SiC: Fid-Bau Portal

A Study of Nitrogen Incorporation in PVT Growth of n^+ 4H SiC

Hansen, D. M. / Chung, G. / Loboda, M. J.

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A Study of Nitrogen Incorporation in PVT Growth of n^+ 4H SiC

Hansen, D. M. / Chung, G. / Loboda, M. J.

A Study of Nitrogen Incorporation in PVT Growth of n^+ 4H SiC

Hansen, D. M. / Chung, G. / Loboda, M. J.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

A Study of Nitrogen Incorporation in PVT Growth of n^+ 4H SiC

Contributors:

Hansen, D. M. (author) / Chung, G. (author) / Loboda, M. J. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

Published in:

Silicon Carbide and Related Materials - 2005 ; 59-62

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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