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Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth
Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth
Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth
Meziere, J. (author) / Ferret, P. (author) / Blanquet, E. (author) / Pons, M. (author) / Di Cioccio, L. (author) / Billon, T. (author)
MATERIALS SCIENCE FORUM ; 457/460 ; 731-734
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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