A platform for research: civil engineering, architecture and urbanism
Structure transition of single-texture CoSi2 nanolayer grown by refractory-interlayer-mediated epitaxy method
Structure transition of single-texture CoSi2 nanolayer grown by refractory-interlayer-mediated epitaxy method
Structure transition of single-texture CoSi2 nanolayer grown by refractory-interlayer-mediated epitaxy method
Akhavan, O. (author) / Moshfegh, A. Z. (author)
APPLIED SURFACE SCIENCE ; 253 ; 2953-2957
2006-01-01
5 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Single-crystalline growth of CoSi2 by refractory-interlayer-mediated epitaxy
British Library Online Contents | 2004
|Effect of Ni interlayer on stress level of CoSi2 films in Co/Ni/Si(100) bi-layered system
British Library Online Contents | 2005
|British Library Online Contents | 2008
|High strength Mg/Nb nanolayer composites
British Library Online Contents | 2011
|British Library Online Contents | 2004
|