A platform for research: civil engineering, architecture and urbanism
Molecular beam epitaxy of semiconductor (BaSi2)/metal (CoSi2) hybrid structures on Si(111) substrates for photovoltaic application
Molecular beam epitaxy of semiconductor (BaSi2)/metal (CoSi2) hybrid structures on Si(111) substrates for photovoltaic application
Molecular beam epitaxy of semiconductor (BaSi2)/metal (CoSi2) hybrid structures on Si(111) substrates for photovoltaic application
Ichikawa, Y. (author) / Kobayashi, M. (author) / Sasase, M. (author) / Suemasu, T. (author)
APPLIED SURFACE SCIENCE ; 254 ; 7963-7967
2008-01-01
5 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Carbon molecular beam epitaxy on various semiconductor substrates
British Library Online Contents | 2012
|Single-crystalline growth of CoSi2 by refractory-interlayer-mediated epitaxy
British Library Online Contents | 2004
|Growth and characterization of CoSi2 films on Si (100) substrates
British Library Online Contents | 2001
|CoSi2 nanostructures by writing FIB ion beam synthesis
British Library Online Contents | 2006
|British Library Online Contents | 2007
|