Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses: Fid-Bau Portal

Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses

Rosinski, M. / Badziak, J. / Czarnecka, A. / Gasior, P. / Parys, P. / Pisarek, M. / Turan, R. / Wolowski, J. / Yerci, S.

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Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses

Rosinski, M. / Badziak, J. / Czarnecka, A. / Gasior, P. / Parys, P. / Pisarek, M. / Turan, R. / Wolowski, J. / Yerci, S.

Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses

Rosinski, M. / Badziak, J. / Czarnecka, A. / Gasior, P. / Parys, P. / Pisarek, M. / Turan, R. / Wolowski, J. / Yerci, S.

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Check availability in my library

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Document information

Title:

Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses

Contributors:

Rosinski, M. (author) / Badziak, J. (author) / Czarnecka, A. (author) / Gasior, P. (author) / Parys, P. (author) / Pisarek, M. (author) / Turan, R. (author) / Wolowski, J. (author) / Yerci, S. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 655-658

Publication date:

2006-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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