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Tuning strain relaxation by surface morphology: Surfactant-mediated epitaxy of germanium on silicon
Tuning strain relaxation by surface morphology: Surfactant-mediated epitaxy of germanium on silicon
Tuning strain relaxation by surface morphology: Surfactant-mediated epitaxy of germanium on silicon
Wietler, T. F. (author) / Bugiel, E. (author) / Hofmann, K. R. (author)
APPLIED SURFACE SCIENCE ; 255 ; 778-780
2008-01-01
3 pages
Article (Journal)
English
DDC:
621.35
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