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    Germanium MOS capacitors with hafnium dioxide and silicon dioxide dielectrics

    New search for: Wadsworth, H. J.
    New search for: Bhattacharya, S.
    New search for: McNeill, D. W.
    New search for: Ruddell, F. H.
    New search for: Armstrong, B. M.
    New search for: Gamble, H. S.
    New search for: Denvir, D.

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    Germanium MOS capacitors with hafnium dioxide and silicon dioxide dielectrics

    New search for: Wadsworth, H. J.
    New search for: Bhattacharya, S.
    New search for: McNeill, D. W.
    New search for: Ruddell, F. H.
    New search for: Armstrong, B. M.
    New search for: Gamble, H. S.
    New search for: Denvir, D.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Germanium MOS capacitors with hafnium dioxide and silicon dioxide dielectrics

    New search for: Wadsworth, H. J.
    New search for: Bhattacharya, S.
    New search for: McNeill, D. W.
    New search for: Ruddell, F. H.
    New search for: Armstrong, B. M.
    New search for: Gamble, H. S.
    New search for: Denvir, D.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Germanium MOS capacitors with hafnium dioxide and silicon dioxide dielectrics

    Contributors:

    Wadsworth, H. J. (author) / Bhattacharya, S. (author) / McNeill, D. W. (author) / Ruddell, F. H. (author) / Armstrong, B. M. (author) / Gamble, H. S. (author) / Denvir, D. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 685-689

    Publication date:

    2006-01-01

    Size:

    5 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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