Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy: Fid-Bau Portal

Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy

Kim, J. H. / Park, Y. J. / Park, Y. M. / Song, J. D. / Lee, J. I. / Kim, T. W.

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Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy

Kim, J. H. / Park, Y. J. / Park, Y. M. / Song, J. D. / Lee, J. I. / Kim, T. W.

Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy

Kim, J. H. / Park, Y. J. / Park, Y. M. / Song, J. D. / Lee, J. I. / Kim, T. W.

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Document information

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Document information

Title:

Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy

Contributors:

Kim, J. H. (author) / Park, Y. J. (author) / Park, Y. M. (author) / Song, J. D. (author) / Lee, J. I. (author) / Kim, T. W. (author)

Published in:

APPLIED SURFACE SCIENCE ; 253 ; 3503-3507

Publication date:

2007-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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Zurauskiene, N. / Marcinkevicius, S. / Janssen, G. et al. | British Library Online Contents | 2002

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Im, H. C. / Kim, J. H. / Oh, D. H. et al. | British Library Online Contents | 2006

Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy

Hoglund, L. / Petrini, E. / Asplund, C. et al. | British Library Online Contents | 2006