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Field-effect transistor based on a combination of nanometer film and undoped semiconductor

Yang, Q. / Li, D. / Yao, B.

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Field-effect transistor based on a combination of nanometer film and undoped semiconductor

Yang, Q. / Li, D. / Yao, B.

Field-effect transistor based on a combination of nanometer film and undoped semiconductor

Yang, Q. / Li, D. / Yao, B.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Field-effect transistor based on a combination of nanometer film and undoped semiconductor

Contributors:

Yang, Q. (author) / Li, D. (author) / Yao, B. (author)

Published in:

APPLIED SURFACE SCIENCE ; 253 ; 3927-3929

Publication date:

2007-01-01

Size:

3 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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