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    Stress-induced leakage currents of the RF sputtered Ta2O5 on N-implanted silicon

    New search for: Novkovski, N.
    New search for: Atanassova, E.
    New search for: Paskaleva, A.

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    Stress-induced leakage currents of the RF sputtered Ta2O5 on N-implanted silicon

    New search for: Novkovski, N.
    New search for: Atanassova, E.
    New search for: Paskaleva, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Stress-induced leakage currents of the RF sputtered Ta2O5 on N-implanted silicon

    New search for: Novkovski, N.
    New search for: Atanassova, E.
    New search for: Paskaleva, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
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    Document information
    Title:

    Stress-induced leakage currents of the RF sputtered Ta2O5 on N-implanted silicon

    Contributors:

    Novkovski, N. (author) / Atanassova, E. (author) / Paskaleva, A. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 253 ; 4396-4403

    Publication date:

    2007-01-01

    Size:

    8 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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