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The effects of thermal annealing in self-assembled Ge/Si quantum dots

Cai, Q. / Zhou, H. / Lu, F.

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The effects of thermal annealing in self-assembled Ge/Si quantum dots

Cai, Q. / Zhou, H. / Lu, F.

The effects of thermal annealing in self-assembled Ge/Si quantum dots

Cai, Q. / Zhou, H. / Lu, F.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

Similar titles

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Document information

Title:

The effects of thermal annealing in self-assembled Ge/Si quantum dots

Contributors:

Cai, Q. (author) / Zhou, H. (author) / Lu, F. (author)

Published in:

APPLIED SURFACE SCIENCE ; 253 ; 4792-4795

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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