Interaction of ion-implantation-induced interstitials in B-doped SiGe: Fid-Bau Portal

Interaction of ion-implantation-induced interstitials in B-doped SiGe

Crosby, R. T. / Jones, K. S. / Law, M. E. / Radic, L. / Thompson, P. E. / Liu, J.

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Interaction of ion-implantation-induced interstitials in B-doped SiGe

Crosby, R. T. / Jones, K. S. / Law, M. E. / Radic, L. / Thompson, P. E. / Liu, J.

Interaction of ion-implantation-induced interstitials in B-doped SiGe

Crosby, R. T. / Jones, K. S. / Law, M. E. / Radic, L. / Thompson, P. E. / Liu, J.

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Check availability in my library

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Document information

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Document information

Title:

Interaction of ion-implantation-induced interstitials in B-doped SiGe

Contributors:

Crosby, R. T. (author) / Jones, K. S. (author) / Law, M. E. (author) / Radic, L. (author) / Thompson, P. E. (author) / Liu, J. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 10 ; 1-5

Publication date:

2007-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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