Influence of Ar/O2 ratio on the properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering: Fid-Bau Portal

Influence of Ar/O2 ratio on the properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering

Ma, Q. B. / Ye, Z. Z. / He, H. P. / Zhu, L. P. / Wang, J. R. / Zhao, B. H.

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Influence of Ar/O2 ratio on the properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering

Ma, Q. B. / Ye, Z. Z. / He, H. P. / Zhu, L. P. / Wang, J. R. / Zhao, B. H.

Influence of Ar/O2 ratio on the properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering

Ma, Q. B. / Ye, Z. Z. / He, H. P. / Zhu, L. P. / Wang, J. R. / Zhao, B. H.

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Document information

Title:

Influence of Ar/O2 ratio on the properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering

Contributors:

Ma, Q. B. (author) / Ye, Z. Z. (author) / He, H. P. (author) / Zhu, L. P. (author) / Wang, J. R. (author) / Zhao, B. H. (author)

Published in:

MATERIALS LETTERS ; 61 ; 2460-2463

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0167-577X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1105 / 530

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