Observation of V Defects in Multiple InGaN/GaN Quantum Well Layers: Fid-Bau Portal

Observation of V Defects in Multiple InGaN/GaN Quantum Well Layers

Tsai, H.-L. / Wang, T.-Y. / Yang, J.-R. / Chuo, C.-C. / Hsu, J.-T. / Feng, Z.-C. / Shiojiri, M.

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Observation of V Defects in Multiple InGaN/GaN Quantum Well Layers

Tsai, H.-L. / Wang, T.-Y. / Yang, J.-R. / Chuo, C.-C. / Hsu, J.-T. / Feng, Z.-C. / Shiojiri, M.

Observation of V Defects in Multiple InGaN/GaN Quantum Well Layers

Tsai, H.-L. / Wang, T.-Y. / Yang, J.-R. / Chuo, C.-C. / Hsu, J.-T. / Feng, Z.-C. / Shiojiri, M.

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Document information

Title:

Observation of V Defects in Multiple InGaN/GaN Quantum Well Layers

Contributors:

Tsai, H.-L. (author) / Wang, T.-Y. (author) / Yang, J.-R. (author) / Chuo, C.-C. (author) / Hsu, J.-T. (author) / Feng, Z.-C. (author) / Shiojiri, M. (author)

Published in:

MATERIALS TRANSACTIONS ; 48 ; 894-898

Publication date:

2007-01-01

Size:

5 pages

ISSN:

1345-9678

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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