Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices: Fid-Bau Portal

Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices

Rowland, L. B. / Dunne, G. T. / Fronheiser, J. / Soloviev, S.

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Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices

Rowland, L. B. / Dunne, G. T. / Fronheiser, J. / Soloviev, S.

Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices

Rowland, L. B. / Dunne, G. T. / Fronheiser, J. / Soloviev, S.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

Title:

Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices

Contributors:

Rowland, L. B. (author) / Dunne, G. T. (author) / Fronheiser, J. (author) / Soloviev, S. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.

Published in:

Silicon Carbide and Related Materials 2006 ; 141-144

MATERIALS SCIENCE FORUM ; 556/557

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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