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EPR, ESE and Pulsed ENDOR Study of Nitrogen Related Centers in 4H-SiC Wafers Grown by Different Technologies
EPR, ESE and Pulsed ENDOR Study of Nitrogen Related Centers in 4H-SiC Wafers Grown by Different Technologies
EPR, ESE and Pulsed ENDOR Study of Nitrogen Related Centers in 4H-SiC Wafers Grown by Different Technologies
Kalabukhova, E. N. (author) / Lukin, S. N. (author) / Savchenko, D. V. (author) / Mitchel, W. C. (author) / Greulich-Weber, S. (author) / Gerstmann, U. (author) / Poppl, A. (author) / Hoentsch, J. (author) / Rauls, E. (author) / Rozentzveig, Y. (author)
2007-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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