Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC: Fid-Bau Portal

Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC

Carlsson, P. / Son, N. T. / Umeda, T. / Isoya, J. / Janzen, E.

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Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC

Carlsson, P. / Son, N. T. / Umeda, T. / Isoya, J. / Janzen, E.

Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC

Carlsson, P. / Son, N. T. / Umeda, T. / Isoya, J. / Janzen, E.

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Check availability in my library

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Document information

Title:

Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC

Contributors:

Carlsson, P. (author) / Son, N. T. (author) / Umeda, T. (author) / Isoya, J. (author) / Janzen, E. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.

Published in:

Silicon Carbide and Related Materials 2006 ; 449-452

MATERIALS SCIENCE FORUM ; 556/557

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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