Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC: Fid-Bau Portal

Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC

Zvanut, M.E. / Ngetich, G. / Chung, H.J. / Polyakov, A.Y. / Skowronski, M. / Garces, N.Y. / Glaser, E.R.

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Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC

Zvanut, M.E. / Ngetich, G. / Chung, H.J. / Polyakov, A.Y. / Skowronski, M. / Garces, N.Y. / Glaser, E.R.

Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC

Zvanut, M.E. / Ngetich, G. / Chung, H.J. / Polyakov, A.Y. / Skowronski, M. / Garces, N.Y. / Glaser, E.R.

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Document information

Title:

Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC

Contributors:

Zvanut, M.E. (author) / Ngetich, G. (author) / Chung, H.J. (author) / Polyakov, A.Y. (author) / Skowronski, M. (author) / Garces, N.Y. (author) / Glaser, E.R. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 385-388

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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