Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis

    New search for: Ohshima, T.
    New search for: Tokunaga, O.
    New search for: Issiki, M.
    New search for: Sasajima, F.
    New search for: Itoh, H.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis

    New search for: Ohshima, T.
    New search for: Tokunaga, O.
    New search for: Issiki, M.
    New search for: Sasajima, F.
    New search for: Itoh, H.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis

    New search for: Ohshima, T.
    New search for: Tokunaga, O.
    New search for: Issiki, M.
    New search for: Sasajima, F.
    New search for: Itoh, H.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis

    Contributors:

    Ohshima, T. (author) / Tokunaga, O. (author) / Issiki, M. (author) / Sasajima, F. (author) / Itoh, H. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.

    Published in:

    Silicon Carbide and Related Materials 2006 ; 457-460

    MATERIALS SCIENCE FORUM ; 556/557

    Publication date:

    2007-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    The origins of the DX center formation in unintentionally doped GaN epilayers grown on sapphire substrates

    Kang, T. W. / Park, C. S. / Kim, T. W. | British Library Online Contents | 2001

    Preparation of low resistive unintentionally doped n-type ZnSe

    Wienecke, M. / Reinhold, B. / Gorbunowa, G. et al. | British Library Online Contents | 1997

    Optical quenching behavior related to the deep levels in unintentionally doped n-type GaN epilayers grown on sapphire substrates

    Kim, N. H. / Kang, T. W. / Kim, T. W. | British Library Online Contents | 2004

    Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates

    Terziyska, P. T. / Butcher, K. S. / Rafailov, P. et al. | British Library Online Contents | 2015

    Persistent Photoconductivity and Recombination Mechanism Studies on Unintentionally Doped GaN Grown by MOCVD

    Dongmei, D. / Chunyu, W. / Jinyan, W. | British Library Online Contents | 2006

    Back to top