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Optical quenching behavior related to the deep levels in unintentionally doped n-type GaN epilayers grown on sapphire substrates

Kim, N. H. / Kang, T. W. / Kim, T. W.

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Optical quenching behavior related to the deep levels in unintentionally doped n-type GaN epilayers grown on sapphire substrates

Kim, N. H. / Kang, T. W. / Kim, T. W.

Optical quenching behavior related to the deep levels in unintentionally doped n-type GaN epilayers grown on sapphire substrates

Kim, N. H. / Kang, T. W. / Kim, T. W.

Access

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Optical quenching behavior related to the deep levels in unintentionally doped n-type GaN epilayers grown on sapphire substrates

Contributors:

Kim, N. H. (author) / Kang, T. W. (author) / Kim, T. W. (author)

Published in:

JOURNAL OF MATERIALS SCIENCE ; 39 ; 6343-6345

Publication date:

2004-01-01

Size:

3 pages

ISSN:

0022-2461

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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