Dynamical Simulation of SiO~2/4H-SiC Interface on C-Face Oxidation Process: From First Principles: Fid-Bau Portal

Dynamical Simulation of SiO~2/4H-SiC Interface on C-Face Oxidation Process: From First Principles

Ohnuma, T. / Miyashita, A. / Iwasawa, M. / Yoshikawa, M. / Tsuchida, H.

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Dynamical Simulation of SiO~2/4H-SiC Interface on C-Face Oxidation Process: From First Principles

Ohnuma, T. / Miyashita, A. / Iwasawa, M. / Yoshikawa, M. / Tsuchida, H.

Dynamical Simulation of SiO~2/4H-SiC Interface on C-Face Oxidation Process: From First Principles

Ohnuma, T. / Miyashita, A. / Iwasawa, M. / Yoshikawa, M. / Tsuchida, H.

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Title:

Dynamical Simulation of SiO~2/4H-SiC Interface on C-Face Oxidation Process: From First Principles

Contributors:

Ohnuma, T. (author) / Miyashita, A. (author) / Iwasawa, M. (author) / Yoshikawa, M. (author) / Tsuchida, H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 591-596

Publication date:

2009-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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