SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps: Fid-Bau Portal

SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps

Perez-Tomas, A. / Jennings, M. R. / Mawby, P. A. / Covington, J. A. / Godignon, P. / Millan, J. / Mestres, N.

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SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps

Perez-Tomas, A. / Jennings, M. R. / Mawby, P. A. / Covington, J. A. / Godignon, P. / Millan, J. / Mestres, N.

SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps

Perez-Tomas, A. / Jennings, M. R. / Mawby, P. A. / Covington, J. A. / Godignon, P. / Millan, J. / Mestres, N.

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Title:

SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps

Contributors:

Perez-Tomas, A. (author) / Jennings, M. R. (author) / Mawby, P. A. (author) / Covington, J. A. (author) / Godignon, P. (author) / Millan, J. (author) / Mestres, N. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K.

Published in:

Silicon Carbide and Related Materials 2006 ; 835-838

MATERIALS SCIENCE FORUM ; 556/557

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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