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3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide

Kobayashi, M. / Uchida, H. / Minami, A. / Sakata, T. / Esteve, R. / Schoner, A.

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3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide

Kobayashi, M. / Uchida, H. / Minami, A. / Sakata, T. / Esteve, R. / Schoner, A.

3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide

Kobayashi, M. / Uchida, H. / Minami, A. / Sakata, T. / Esteve, R. / Schoner, A.

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Document information

Title:

3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide

Contributors:

Kobayashi, M. (author) / Uchida, H. (author) / Minami, A. (author) / Sakata, T. (author) / Esteve, R. (author) / Schoner, A. (author) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.

Published in:

Silicon Carbide and Related Materials 2010 ; 645-648

MATERIALS SCIENCE FORUM ; 679/680

Publication date:

2011-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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