Performance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse Bias: Fid-Bau Portal

Performance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse Bias

Felsl, H. P. / Wachutka, G.

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Performance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse Bias

Felsl, H. P. / Wachutka, G.

Performance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse Bias

Felsl, H. P. / Wachutka, G.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Performance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse Bias

Contributors:

Felsl, H. P. (author) / Wachutka, G. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 1153-1156

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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