A platform for research: civil engineering, architecture and urbanism
Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum
Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum
Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum
Camara, N. (author) / Romanov, L. P. (author) / Kirillov, A. V. (author) / Boltovets, M. S. (author) / Lebedev, A. A. (author) / Zelenin, V. V. (author) / Kayambaki, M. (author) / Zekentes, K. (author) / Wright, N. / Johnson, C. M.
2007-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
SiC Heteropolytype Structures Grown by Sublimation Epitaxy
British Library Online Contents | 2007
|Properties of AlN Layers Grown by Sublimation Epitaxy
British Library Online Contents | 2003
|6H-3C SiC structures grown by sublimation epitaxy
British Library Online Contents | 1997
|Structural Properties of 3C-SiC Grown by Sublimation Epitaxy
British Library Online Contents | 2009
|British Library Online Contents | 2009
|