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Impact of Acceptor Concentration on Electronic Properties of n^+-GaN/p^+-SiC Heterojunction for GaN/SiC Heterojunction Bipolar Transistor
Impact of Acceptor Concentration on Electronic Properties of n^+-GaN/p^+-SiC Heterojunction for GaN/SiC Heterojunction Bipolar Transistor
Impact of Acceptor Concentration on Electronic Properties of n^+-GaN/p^+-SiC Heterojunction for GaN/SiC Heterojunction Bipolar Transistor
Amari, K. (author) / Suda, J. (author) / Kimoto, T. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.
Silicon Carbide and Related Materials 2006 ; 1039-1042
MATERIALS SCIENCE FORUM ; 556/557
2007-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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