Dielectric integrity of ion beam deposited aluminum oxide films in the 10

Dielectric integrity of ion beam deposited aluminum oxide films in the 10–100 nm thickness range

Sant, S. B. / Wang, J. / Sampson, D. / Kools, J. C.

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Dielectric integrity of ion beam deposited aluminum oxide films in the 10–100 nm thickness range

Sant, S. B. / Wang, J. / Sampson, D. / Kools, J. C.

Dielectric integrity of ion beam deposited aluminum oxide films in the 10–100 nm thickness range

Sant, S. B. / Wang, J. / Sampson, D. / Kools, J. C.

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Document information

Title:

Dielectric integrity of ion beam deposited aluminum oxide films in the 10–100 nm thickness range

Contributors:

Sant, S. B. (author) / Wang, J. (author) / Sampson, D. (author) / Kools, J. C. (author)

Published in:

MATERIALS LETTERS ; 62 ; 530-535

Publication date:

2008-01-01

Size:

6 pages

ISSN:

0167-577X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1105 / 530

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