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InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance
InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance
InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance
Hazdra, P. (author) / Oswald, J. (author) / Atef, M. (author) / Kuldova, K. (author) / Hospodkova, A. (author) / Hulicius, E. (author) / Pangrac, J. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 147 ; 175-178
2008-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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