Improvement of the reverse leakage behavior of Ag-based ohmic contacts for GaN-based light-emitting diodes using MgZnO interlayer: Fid-Bau Portal

Improvement of the reverse leakage behavior of Ag-based ohmic contacts for GaN-based light-emitting diodes using MgZnO interlayer

Hong, H. G. / Song, J. O. / Lee, T. / Ferguson, I. T. / Kwak, J. S. / Seong, T. Y.

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Improvement of the reverse leakage behavior of Ag-based ohmic contacts for GaN-based light-emitting diodes using MgZnO interlayer

Hong, H. G. / Song, J. O. / Lee, T. / Ferguson, I. T. / Kwak, J. S. / Seong, T. Y.

Improvement of the reverse leakage behavior of Ag-based ohmic contacts for GaN-based light-emitting diodes using MgZnO interlayer

Hong, H. G. / Song, J. O. / Lee, T. / Ferguson, I. T. / Kwak, J. S. / Seong, T. Y.

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Check availability in my library

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Title:

Improvement of the reverse leakage behavior of Ag-based ohmic contacts for GaN-based light-emitting diodes using MgZnO interlayer

Contributors:

Hong, H. G. (author) / Song, J. O. (author) / Lee, T. (author) / Ferguson, I. T. (author) / Kwak, J. S. (author) / Seong, T. Y. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 129 ; 176-179

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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