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Fabrication, morphology, and photoluminescence properties of GaN nanowires and nanorods by ammoniating Ga2O3/V films on Si(111)
Fabrication, morphology, and photoluminescence properties of GaN nanowires and nanorods by ammoniating Ga2O3/V films on Si(111)
Fabrication, morphology, and photoluminescence properties of GaN nanowires and nanorods by ammoniating Ga2O3/V films on Si(111)
APPLIED SURFACE SCIENCE ; 254 ; 4166-4170
2008-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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