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    Spectroscopic ellipsometry analysis of GaAs1?xNx layers grown by molecular beam epitaxy

    New search for: Sedrine, N. B.
    New search for: Rihani, J.
    New search for: Stehle, J. L.
    New search for: Harmand, J. C.
    New search for: Chtourou, R.

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    Spectroscopic ellipsometry analysis of GaAs1?xNx layers grown by molecular beam epitaxy

    New search for: Sedrine, N. B.
    New search for: Rihani, J.
    New search for: Stehle, J. L.
    New search for: Harmand, J. C.
    New search for: Chtourou, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Spectroscopic ellipsometry analysis of GaAs1?xNx layers grown by molecular beam epitaxy

    New search for: Sedrine, N. B.
    New search for: Rihani, J.
    New search for: Stehle, J. L.
    New search for: Harmand, J. C.
    New search for: Chtourou, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Spectroscopic ellipsometry analysis of GaAs1?xNx layers grown by molecular beam epitaxy

    Contributors:

    Sedrine, N. B. (author) / Rihani, J. (author) / Stehle, J. L. (author) / Harmand, J. C. (author) / Chtourou, R. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -AMSTERDAM THEN LAUSANNE- C ; 28 ; 640-644

    Publication date:

    2008-01-01

    Size:

    5 pages

    ISSN:

    0928-4931

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.1 / 660

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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