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    Photoluminescence study of the nitrogen content effect on GaAs/GaAs1?xNx/GaAs/AlGaAs: (Si) quantum well

    New search for: Hamdouni, A.
    New search for: Bousbih, F.
    New search for: Ben bouzid, S.
    New search for: Aloulou, S.
    New search for: Harmand, J. C.
    New search for: Chtourou, R.

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    Photoluminescence study of the nitrogen content effect on GaAs/GaAs1?xNx/GaAs/AlGaAs: (Si) quantum well

    New search for: Hamdouni, A.
    New search for: Bousbih, F.
    New search for: Ben bouzid, S.
    New search for: Aloulou, S.
    New search for: Harmand, J. C.
    New search for: Chtourou, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Photoluminescence study of the nitrogen content effect on GaAs/GaAs1?xNx/GaAs/AlGaAs: (Si) quantum well

    New search for: Hamdouni, A.
    New search for: Bousbih, F.
    New search for: Ben bouzid, S.
    New search for: Aloulou, S.
    New search for: Harmand, J. C.
    New search for: Chtourou, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Photoluminescence study of the nitrogen content effect on GaAs/GaAs1?xNx/GaAs/AlGaAs: (Si) quantum well

    Contributors:

    Hamdouni, A. (author) / Bousbih, F. (author) / Ben bouzid, S. (author) / Aloulou, S. (author) / Harmand, J. C. (author) / Chtourou, R. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -AMSTERDAM THEN LAUSANNE- C ; 28 ; 816-819

    Publication date:

    2008-01-01

    Size:

    4 pages

    ISSN:

    0928-4931

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.1 / 660

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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