Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition

Jeong, Y. / Sakuraba, M. / Murota, J. | British Library Online Contents | 2005

Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition

Shimamune, Y. / Sakuraba, M. / Matsuura, T. et al. | British Library Online Contents | 2000

Electrical properties of W delta doped Si epitaxial films grown on Si(100) by ultraclean low-pressure chemical vapor deposition

Kurosawa, T. / Komatsu, T. / Sakuraba, M. et al. | British Library Online Contents | 2005

Atomic-layer etching of Ge using an ultraclean ECR plasma

Sugiyama, T. / Matsuura, T. / Murota, J. | British Library Online Contents | 1997

Doping of InGaP epitaxial layers grown by low pressure metal-organic chemical vapor deposition

Wu, C. C. / Lin, K. C. / Chan, S. H. et al. | British Library Online Contents | 1993