Self-limited growth of Si on B atomic-layer formed Ge(100) by ultraclean low-pressure CVD system

Yokogawa, T. / Ishibashi, K. / Sakuraba, M. et al. | British Library Online Contents | 2008

Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition

Jeong, Y. / Sakuraba, M. / Murota, J. | British Library Online Contents | 2005

Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition

Shimamune, Y. / Sakuraba, M. / Matsuura, T. et al. | British Library Online Contents | 2000

Atomic layer etching of germanium

Ikeda, K. / Imai, S. / Matsumura, M. | British Library Online Contents | 1997

Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(100) by ultraclean low-pressure chemical vapor deposition

Tanno, H. / Sakuraba, M. / Tillack, B. et al. | British Library Online Contents | 2008