A platform for research: civil engineering, architecture and urbanism
Evaluation of Si3N4/Si interface by UV Raman spectroscopy
Evaluation of Si3N4/Si interface by UV Raman spectroscopy
Evaluation of Si3N4/Si interface by UV Raman spectroscopy
Ogura, A. (author) / Yoshida, T. (author) / Kosemura, D. (author) / Kakemura, Y. (author) / Aratani, T. (author) / Higuchi, M. (author) / Sugawa, S. (author) / Teramoto, A. (author) / Ohmi, T. (author) / Hattori, T. (author)
APPLIED SURFACE SCIENCE ; 254 ; 6229-6231
2008-01-01
3 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
The crystal/glass interface in doped Si3N4
British Library Online Contents | 2006
|Characterization of grain alignment in Si3N4(w)/Si3N4 composites
British Library Online Contents | 2004
|Characterization of the Si3N4/Si3N4 joints fabricated using particles modified braze
British Library Online Contents | 2014
|Photomodulation Raman scattering spectroscopy of ZnSe/GaAs heterostructure interface
British Library Online Contents | 1996
|