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Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition

Lee, S. W. / Chen, P. S. / Cheng, S. L. / Lee, M. H. / Chang, H. T. / Lee, C. H. / Liu, C. W.

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Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition

Lee, S. W. / Chen, P. S. / Cheng, S. L. / Lee, M. H. / Chang, H. T. / Lee, C. H. / Liu, C. W.

Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition

Lee, S. W. / Chen, P. S. / Cheng, S. L. / Lee, M. H. / Chang, H. T. / Lee, C. H. / Liu, C. W.

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Document information

Title:

Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition

Contributors:

Lee, S. W. (author) / Chen, P. S. (author) / Cheng, S. L. (author) / Lee, M. H. (author) / Chang, H. T. (author) / Lee, C. H. (author) / Liu, C. W. (author)

Published in:

APPLIED SURFACE SCIENCE ; 254 ; 6261-6264

Publication date:

2008-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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