Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si1-x-yGexCy thin films on Si(001) with ethylene (C2H4) precursor as carbon source: Fid-Bau Portal

Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si1-x-yGexCy thin films on Si(001) with ethylene (C2H4) precursor as carbon source

Chen, P. S. / Lee, S. W. / Liu, Y. H. / Lee, M. H. / Tsai, M. J. / Liu, C. W.

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Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si1-x-yGexCy thin films on Si(001) with ethylene (C2H4) precursor as carbon source

Chen, P. S. / Lee, S. W. / Liu, Y. H. / Lee, M. H. / Tsai, M. J. / Liu, C. W.

Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si1-x-yGexCy thin films on Si(001) with ethylene (C2H4) precursor as carbon source

Chen, P. S. / Lee, S. W. / Liu, Y. H. / Lee, M. H. / Tsai, M. J. / Liu, C. W.

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Order at Subito €

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Document information

Title:

Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si1-x-yGexCy thin films on Si(001) with ethylene (C2H4) precursor as carbon source

Contributors:

Chen, P. S. (author) / Lee, S. W. (author) / Liu, Y. H. (author) / Lee, M. H. (author) / Tsai, M. J. (author) / Liu, C. W. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 15-19

Publication date:

2005-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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