The high quality ZnO growth on c-Al2O3 substrate with Cr2O3 buffer layer using plasma-assisted molecular beam epitaxy: Fid-Bau Portal

The high quality ZnO growth on c-Al2O3 substrate with Cr2O3 buffer layer using plasma-assisted molecular beam epitaxy

Park, J. S. / Hong, S. K. / Minegishi, T. / Im, I. H. / Park, S. H. / Hanada, T. / Chang, J. H. / Cho, M. W. / Yao, T.

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The high quality ZnO growth on c-Al2O3 substrate with Cr2O3 buffer layer using plasma-assisted molecular beam epitaxy

Park, J. S. / Hong, S. K. / Minegishi, T. / Im, I. H. / Park, S. H. / Hanada, T. / Chang, J. H. / Cho, M. W. / Yao, T.

The high quality ZnO growth on c-Al2O3 substrate with Cr2O3 buffer layer using plasma-assisted molecular beam epitaxy

Park, J. S. / Hong, S. K. / Minegishi, T. / Im, I. H. / Park, S. H. / Hanada, T. / Chang, J. H. / Cho, M. W. / Yao, T.

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Title:

The high quality ZnO growth on c-Al2O3 substrate with Cr2O3 buffer layer using plasma-assisted molecular beam epitaxy

Contributors:

Park, J. S. (author) / Hong, S. K. (author) / Minegishi, T. (author) / Im, I. H. (author) / Park, S. H. (author) / Hanada, T. (author) / Chang, J. H. (author) / Cho, M. W. (author) / Yao, T. (author)

Published in:

APPLIED SURFACE SCIENCE ; 254 ; 7786-7789

Publication date:

2008-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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